Used with tunnel-diode memory operating 5 Mc.-S. Takahashi and O. Ishii, High-Speed Memory Uses Tunnel Diode Circuit, Electronics,34:42, p66-68.
• Case: Metal hermetically sealed DO-13 package
• Terminals: Axial leads, solderable per MIL-STD-202 Method 208
• Solderable leads = 230°C for 10 seconds (1.59mm from case)
• Weight: 1.5 grammes (approx)
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• Hermetically sealed• Breakdown voltage range 6.8 - 200 volts• Glass passivated junction• Excellent clamping capability• Low zener impedance• 100% surge tested• -55°C to +150°C• Bi-directional
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• Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form)
• 1 watt steady state
• Response time: 1 x 10-12 seconds (theoretical)
• Operating & storage temperature: -55°C to +150°C
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